Bucheon, South Korea

Bong-yong Lee

This inventor holds 1 USPTO granted patent. Top assignee: Semiconductor Components Industries, LLC. Active years: 2018.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Bong-yong Lee. Retrieved from https://idiyas.com/inventor/bong-yong-lee-fobyek9e

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 5.0

ph-index = 1


Company Filing History:


Years Active: 2018

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1 patent (USPTO):Explore Patents

Title: Innovations by Bong-yong Lee

Introduction

Bong-yong Lee is a notable inventor based in Bucheon-si, South Korea. He has made significant contributions to the field of semiconductor technology. His work focuses on improving power devices and their manufacturing processes.

Latest Patents

Bong-yong Lee holds a patent for a power device and method of manufacturing the same. This invention provides an improved field stop layer in power devices. The method includes a first ion implant process that implants impurity ions of a first conductive type into a semiconductor substrate. This process forms an implanted field stop layer where the semiconductor substrate is of the first conductive type. Additionally, a second ion implant process is performed to enhance the impurity concentration in specific parts of the implanted field stop layer.

Career Highlights

Bong-yong Lee is currently employed at Semiconductor Components Industries, LLC. His work at this company has allowed him to develop innovative solutions in semiconductor technology. His contributions have been recognized within the industry for their impact on power device efficiency.

Collaborations

Bong-yong Lee has collaborated with notable colleagues such as Kyu-hyun Lee and Young-chul Kim. Their teamwork has fostered advancements in their respective fields.

Conclusion

Bong-yong Lee's innovative work in semiconductor technology exemplifies the importance of research and development in creating efficient power devices. His contributions continue to influence the industry positively.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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