The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 01, 2018
Filed:
May. 05, 2017
Fairchild Korea Semiconductor Ltd., Bucheon-si, KR;
Kyu-hyun Lee, Bucheon-si, KR;
Young-chul Kim, Cimpo-si, KR;
Kyeong-seok Park, Bucheon-si, KR;
Bong-yong Lee, Bucheon-si, KR;
Young-chul Choi, Sunnyvale, CA (US);
Semiconductor Components Industries LLC, Phoenix, AZ (US);
Abstract
Provided are a power device having an improved field stop layer and a method of manufacturing the same. The method can include performing a first ion implant process by implanting impurity ions of a first conductive type into a front surface of a semiconductor substrate to form an implanted field stop layer where the semiconductor substrate is the first conductive type. The method can include performing a second ion implant process by implanting impurity ions of the first conductive type into a first part of the implanted field stop layer such that an impurity concentration of the first part of the implanted field stop layer is higher than an impurity concentration of a second part of the implanted field stop layer.