Semiconductor Components Industries, LLC

Bong-yong Lee

Young-chul Choi

Kyu-hyun Lee

Kyeong-seok Park

Young-chul Kim

Provided are a power device having an improved field stop layer and a method of manufacturing the same. The method can include performing a first ion implant process by implanting impurity ions of a first conductive type into a front surface of a semiconductor substrate to form an implanted field stop layer where the semiconductor substrate is the first conductive type. The method can include performing a second ion implant process by implanting impurity ions of the first conductive type into a first part of the implanted field stop layer such that an impurity concentration of the first part of the implanted field stop layer is higher than an impurity concentration of a second part of the implanted field stop layer.

Growing community of inventors

Bucheon-si, South Korea

Bong-yong Lee