Seongnam, South Korea

Bong-Su Kim

This inventor holds 1 USPTO granted patent and 1 published patent application and 3 EPO patents. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2014.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Bong-Su Kim. Retrieved from https://idiyas.com/inventor/bong-su-kim-i90d2xpz

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 1 

% Patents Active = 100.0


Average Co-Inventor Count = 6.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2014

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1 patent (USPTO):Explore Patents

Title: Bong-Su Kim: Innovator in Semiconductor Technology

Introduction

Bong-Su Kim is a notable inventor based in Seongnam, South Korea. He has made significant contributions to the field of semiconductor technology, particularly through his innovative patent related to transistor design.

Latest Patents

Bong-Su Kim holds a patent for a Recess Gate Transistor. This invention outlines a method of forming a semiconductor device, which includes several steps such as forming hard masks on a substrate, creating trenches, and depositing various layers to enhance the device's functionality. His work in this area demonstrates a commitment to advancing semiconductor technology.

Career Highlights

Bong-Su Kim is associated with Samsung Electronics Co., Ltd., a leading company in the electronics industry. His role at Samsung has allowed him to work on cutting-edge technologies and contribute to the company's reputation for innovation.

Collaborations

Throughout his career, Bong-Su Kim has collaborated with talented individuals such as Ho-in Ryu and Dae-Ik Kim. These collaborations have likely enriched his work and contributed to the success of his projects.

Conclusion

Bong-Su Kim is a distinguished inventor whose work in semiconductor technology has led to valuable innovations. His patent for the Recess Gate Transistor exemplifies his expertise and dedication to advancing the field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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