Samsung Electronics Co., Ltd.

Bong-Su Kim

Dae-Ik Kim

Ho-Jun Lee

Ji-Won Kim

Eun-Young Kim

Ho-in Ryu

Si-Hyung Lee

Jin-Hee Lee

Dae-Young Jang

Joon-Young Ahn

Kun-Hee Jo

A method of forming a semiconductor device is provided, comprising forming a plurality of hard masks on a substrate by patterning an insulating layer; forming a plurality of trenches in the substrate, each trench having trench walls disposed between two adjacent masks and extending vertically from a bottom portion to an upper portion; forming an insulating layer on the hard masks and the trench walls; forming a conductive layer on the insulating layer; etching the conductive layer to form conductive layer patterns to fill the bottom portions of the trenches; depositing a buffer layer on the conductive layer patterns and the trench walls; and filling the upper portions of the trenches with a capping layer.

Recess gate transistor

Growing community of inventors

Sungnam-si, South Korea

Bong-Su Kim