Seoul, South Korea

Bong-Soon Lim

This inventor holds 32 USPTO granted patents and 1 published patent application, primarily in Nonvolatile Memory Devices. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2002-2024.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Bong-Soon Lim. Retrieved from https://idiyas.com/inventor/bong-soon-lim

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 32 

% Patents Active = 100.0

Average Co-Inventor Count = 3.6

ph-index = 6

Forward Citations = 160(Granted Patents)


Location History:

  • Suwon, KR (2002)
  • Seoul, KR (2015 - 2024)

Company Filing History:


Years Active: 2002-2024

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Areas of Expertise:
Nonvolatile Memory
Vertical NAND
Erase Control Circuit
Data Erase Characteristics
Memory System
Programming Method
Voltage Management
Degradation Detection
Substrate Control Circuit
SSD Device
Chemical Vapor Deposition
Power Management
32 patents (USPTO):Explore Patents

Title: The Innovative Journey of Bong-Soon Lim

Introduction: Bong-Soon Lim, an esteemed inventor based in Seoul, South Korea, has made significant contributions to the field of nonvolatile memory devices. With a total of 32 patented innovations, Lim's work showcases his mastery in developing advanced memory technologies that are pivotal in modern electronics.

Latest Patents: Among his latest breakthroughs are two noteworthy patents: the "Nonvolatile memory device with intermediate switching transistors and programming method" and the "Nonvolatile memory device with capability of determining degradation of data erase characteristics." The first patent describes a programming method for nonvolatile memory devices that utilizes a structure with multiple memory cells arranged vertically. This innovative approach includes intermediate switching transistors that optimize programming efficiency by allowing selective activation based on program addresses. His second patent introduces a mechanism for evaluating data erase characteristics in nonvolatile memory, which dynamically adjusts the voltage applied to selection transistors to enhance the reliability of data retention over time.

Career Highlights: Bong-Soon Lim has worked with industry giants such as Samsung Electronics Co., Ltd., where he honed his skills and contributed to pioneering technologies in the semiconductor domain. His experience in these prominent firms has placed him at the forefront of memory technology innovations.

Collaborations: Throughout his career, Lim has collaborated with esteemed colleagues, including Il-Han Park and Jin-Young Kim. These collaborations have fostered a progressive environment where cutting-edge ideas can flourish, leading to significant advancements in nonvolatile memory technologies.

Conclusion: Bong-Soon Lim's extensive portfolio of patents and collaborations reflects his dedication to innovation in the memory technology sector. His contributions not only enhance the functionality of electronic devices but also pave the way for future advancements. As a leading inventor, Lim continues to inspire upcoming generations to explore the potential of new technologies.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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