This inventor holds 3 USPTO granted patents. Top assignee: Texas Instruments Corporation. Active years: 1997-2011.
Location History:
- Tsuchivra, JP (1997)
- Ibaraki, JP (2010 - 2011)
Company Filing History:
Years Active: 1997-2011
Title: Boku Katsushi: Innovator in Ferroelectric Memory Technology
Introduction
Boku Katsushi is a notable inventor based in Ibaraki, Japan. He has made significant contributions to the field of ferroelectric memory technology, holding a total of 3 patents. His work focuses on innovative methods for identifying and repairing failing bits in ferroelectric memory devices.
Latest Patents
Katsushi's latest patents include a method for screening and repairing bits in ferroelectric memory devices. This method involves writing same state data to a ferroelectric capacitor and baking it for a specified period at a selected temperature. A same state read is performed after baking to determine if an error occurred. The specified baking time ranges from 10 minutes to 2 hours, with temperatures between 85°C and 150°C. Additionally, his related methods can detect imprinted bits and identify opposite state errors through a series of writes and reads at varying temperatures.
Career Highlights
Boku Katsushi is currently employed at Texas Instruments Corporation, where he continues to develop innovative solutions in memory technology. His expertise in ferroelectric memory has positioned him as a key contributor to advancements in this area.
Collaborations
Katsushi collaborates with talented coworkers, including John Anthony Rodriguez and John Lane Gertas. Their combined efforts contribute to the ongoing research and development at Texas Instruments Corporation.
Conclusion
Boku Katsushi's work in ferroelectric memory technology exemplifies innovation and dedication to improving memory devices. His patents reflect a commitment to advancing the field and addressing challenges in memory reliability.