The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 03, 1997
Filed:
Apr. 20, 1995
Nagata Toshiyuki, Tsukuba, JP;
Yoshida Hiroyuki, Ryugasaki, JP;
Niuya Takayuki, Tsukuba, JP;
Ogata Yoshihiro, Tsuchivra, JP;
Boku Katsushi, Tsuchivra, JP;
Miyai Yoichi, Toride, JP;
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
A semiconductor storage device is disclosed herein. A semiconductor substrate 1 has a first conductive type. A first groove is provided in this semiconductor substrate 1. A second groove 20, which is deeper than the first groove, is provided so as to be stacked within the first groove. A MOS transistor which include first and second regions 22 and 23 is connected to an accumulating electrode 133. The accumulating electrode 133 is disposed in the second groove 20 and separated from it by an insulating film 124. An electrode 143 is provided on the accumulating electrode 133 and separated therefrom by a capacitor insulating film 135. The electrode 143 is buried in the first and second grooves.