This inventor holds 2 USPTO granted patents and 1 published patent application. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2026.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2026
Title: Bing-Sian Wu: Innovator in Semiconductor Manufacturing
Introduction: Bing-Sian Wu is an inventor based in Hsinchu, Taiwan, known for his contributions to semiconductor device manufacturing. Although he currently holds no granted patents, his innovative ideas are reflected in his latest patent applications.
Latest Patent Applications: Wu's recent patent applications include a method of manufacturing a semiconductor device and a semiconductor device itself. The first application describes a method that involves forming n-type and p-type source/drain epitaxial layers, creating a dielectric layer, and forming openings to expose parts of these layers. The method emphasizes that the recessing amounts of the n-type and p-type layers differ. The second application outlines a process that includes forming a dummy gate over a semiconductor fin, creating a source/drain epitaxial structure, and replacing the dummy gate with a gate structure. This method also details the formation of a dielectric structure and the subsequent recessing of portions embedded in an interlayer dielectric layer.
Conclusion: Bing-Sian Wu is an emerging inventor in the field of semiconductor technology, with promising patent applications that showcase his innovative approach to manufacturing processes. His work has the potential to contribute significantly to advancements in semiconductor devices.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile