Hefei, China

Bin Zhao

This inventor holds 1 USPTO granted patent. Top assignee: Changxin Memory Technologies, Inc.. Active years: 2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Bin Zhao. Retrieved from https://idiyas.com/inventor/bin-zhao-xlltm287

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 6.0

ph-index = 1


Company Filing History:


Years Active: 2025

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1 patent (USPTO):Explore Patents

Title: Bin Zhao - Innovator in Semiconductor Technology

Introduction

Bin Zhao is a prominent inventor based in Hefei, China. He has made significant contributions to the field of semiconductor technology. His innovative work has led to the development of a unique preparation method for semiconductor structures.

Latest Patents

Bin Zhao holds 1 patent for his invention titled "Preparation method for semiconductor structure and same." This patent outlines a comprehensive method for creating semiconductor structures. The process involves several steps, including providing a substrate, etching target layer, and forming various mask layers. The method emphasizes the importance of high etching selectivity ratios between materials used in the spacers and filling layers.

Career Highlights

Bin Zhao is currently employed at Changxin Memory Technologies, Inc. His role at the company allows him to apply his expertise in semiconductor technology. His work has been instrumental in advancing the company's research and development efforts.

Collaborations

Bin Zhao has collaborated with notable colleagues, including Longyang Chen and Shijie Bai. These partnerships have fostered a productive environment for innovation and technological advancement.

Conclusion

Bin Zhao's contributions to semiconductor technology exemplify the spirit of innovation. His patent and work at Changxin Memory Technologies, Inc. highlight his commitment to advancing the field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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