Location History:
- Anhui Province, CN (2022)
- Hefei, CN (2020 - 2024)
Company Filing History:
4 out of 1,688 
1 out of 24 
1 out of 1 Years Active: 2020-2025
Title: The Innovations of Bin Yang
Introduction
Bin Yang is a prominent inventor based in Hefei, China. He has made significant contributions to the field of semiconductor technology, holding a total of 7 patents. His work focuses on innovative semiconductor structures and manufacturing methods that enhance performance and efficiency.
Latest Patents
Among his latest patents is a semiconductor structure featuring a transition layer located between the gate and the ion implantation layer. This invention includes a semiconductor substrate with a trench, a gate formed within the trench, and an ion implantation layer positioned outside the trench. The transition layer's unique doping concentration improves the overall functionality of the semiconductor device. Another notable patent describes a manufacturing method for a semiconductor structure that involves forming cylindrical capacitors and creating a dielectric layer that enhances the device's performance.
Career Highlights
Bin Yang has worked with notable companies such as Changxin Memory Technologies, Inc. and Hefei Midea Heating & Ventilating Equipment Co., Ltd. His experience in these organizations has allowed him to develop and refine his innovative ideas in semiconductor technology.
Collaborations
Throughout his career, Bin Yang has collaborated with talented individuals, including Shanchun Zhang and Jiashi Peng. These partnerships have contributed to the advancement of his research and inventions.
Conclusion
Bin Yang's contributions to semiconductor technology through his patents and collaborations highlight his role as a leading inventor in the field. His innovative approaches continue to shape the future of semiconductor manufacturing and design.