The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 09, 2024
Filed:
Nov. 07, 2021
Applicant:
Changxin Memory Technologies, Inc., Hefei, CN;
Assignee:
CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei, CN;
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/49 (2006.01); H01L 21/768 (2006.01); H01L 23/48 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76898 (2013.01); H01L 21/76816 (2013.01); H01L 21/76846 (2013.01); H01L 23/481 (2013.01);
Abstract
A semiconductor device manufacturing method includes: providing a semiconductor base; patterning the first medium layer to form a groove extending along the base in the base; forming a first auxiliary layer and a first metal layer sequentially in the groove, where the first metal layer is located on the side of the first auxiliary layer towards the first medium layer; thinning the base on the second surface of the base to expose the first auxiliary layer; removing the first auxiliary layer to form a first opening; and forming a second metal layer on the second surface of the base, where the second metal layer fills the first opening.