San Diego, CA, United States of America

Bilal Zafar

USPTO Granted Patents = 7 

 

Average Co-Inventor Count = 3.7

ph-index = 2

Forward Citations = 13(Granted Patents)


Location History:

  • San Diego, CA (US) (2015 - 2018)
  • Gladwyne, PA (US) (2019)

Company Filing History:


Years Active: 2015-2019

where 'Filed Patents' based on already Granted Patents

7 patents (USPTO):

Title: The Innovative Mind of Bilal Zafar

Introduction

Bilal Zafar is a prominent inventor based in San Diego, CA. He has made significant contributions to the field of memory circuits, holding a total of 7 patents. His work is characterized by innovative approaches to clock shaping and memory operations.

Latest Patents

One of Bilal Zafar's latest patents is titled "Apparatus and method of clock shaping for memory." This invention describes a memory circuit that includes a clock delay circuit. The clock delay circuit utilizes the polarity of a write enable signal to determine whether the operation is a write or read on the memory. This design aims to provide the desired clock latency to the memory. The clock delay circuit features both a low skew portion and a high skew portion. The selection between these portions depends on the status of the write enable line, such as its polarity or logical value.

Career Highlights

Bilal Zafar is currently employed at Qualcomm Incorporated, a leading technology company known for its advancements in telecommunications and semiconductor technology. His role at Qualcomm allows him to work on cutting-edge technologies that shape the future of memory circuits.

Collaborations

Throughout his career, Bilal has collaborated with notable colleagues, including Venkatasubramanian Narayanan and Venugopal Boynapalli. These collaborations have contributed to the development of innovative solutions in the field of memory technology.

Conclusion

Bilal Zafar's contributions to memory circuit technology and his innovative patents highlight his expertise and dedication to advancing the field. His work continues to influence the development of efficient memory systems in modern technology.

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