Bi Feng Li

Title: Bi Feng Li: Innovator in Semiconductor Technology

Introduction

Bi Feng Li is a prominent inventor based in Hubei, China. He has made significant contributions to the field of semiconductor technology, holding a total of four patents. His innovative methods have advanced the techniques used in semiconductor manufacturing.

Latest Patents

One of Bi Feng Li's latest patents is titled "Method and structure for cutting dense line patterns using self-aligned double patterning." This patent describes a method for forming a semiconductor structure that includes creating a plurality of mandrel lines on a first dielectric layer. The process involves forming groups of discontinuous mandrel line pairs with a first mask, disposing a second dielectric layer, and creating dielectric spacers on the sidewalls of the mandrel lines. The method further details the removal of the mandrel lines to form spacer masks, the creation of blocked regions using a second mask, and the formation of openings through the first dielectric layer. The final steps include disposing an objective material in the openings and forming objective lines that are coplanar with the top surfaces of the first dielectric layer.

Career Highlights

Bi Feng Li is currently employed at Yangtze Memory Technologies Co., Ltd. His work at this company has positioned him as a key player in the semiconductor industry. His innovative approaches have not only contributed to his personal success but have also enhanced the capabilities of his organization.

Collaborations

Bi Feng Li collaborates with talented individuals such as Lu Ming Fan and Zi Qun Hua. Their teamwork fosters an environment of creativity and innovation, leading to groundbreaking advancements in their field.

Conclusion

Bi Feng Li's contributions to semiconductor technology through his patents and collaborations highlight his role as a leading inventor in the industry. His work continues to influence the future of semiconductor manufacturing.