Benno Orschel

Title: The Innovations of Benno Orschel

Introduction

Benno Orschel is a notable inventor based in Salem, Oregon, who has made significant contributions to the field of semiconductor crystal growth. With a total of eight patents to his name, Orschel's work focuses on improving the processes involved in growing high-quality silicon crystals.

Latest Patents

Orschel's latest patents include a "Procedure for in-situ determination of thermal gradients at the crystal growth front." This invention involves a method and apparatus for growing a semiconductor crystal by pulling it from melt at a modulated pull speed. The modulation allows for the in-situ determination of temperature gradients, which can be used to control process parameters that affect the stability and properties of the finished crystal. Another significant patent is the "Method and apparatus for controlling diameter of a silicon crystal ingot in a growth process." This improvement enhances the conventional CZ process by defining an error between a target taper of a meniscus and a measured taper, translating this error into feedback adjustments to the pull speed of the silicon ingot.

Career Highlights

Throughout his career, Benno Orschel has worked with prominent companies such as Sumco Corporation and Sumco Phoenix Corporation. His experience in these organizations has allowed him to refine his expertise in semiconductor technology and crystal growth processes.

Collaborations

Orschel has collaborated with notable professionals in his field, including Keiichi Takanashi and Joel Kearns. These collaborations have contributed to the advancement of his innovative work and the development of new technologies in semiconductor manufacturing.

Conclusion

Benno Orschel's contributions to semiconductor crystal growth through his patents and collaborations highlight his importance in the field of innovation. His work continues to influence the industry and pave the way for future advancements in semiconductor technology.