The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 18, 2014
Filed:
Mar. 29, 2012
Benno Orschel, Salem, OR (US);
Andrzej Buczkowski, Bend, OR (US);
Joel Kearns, Springfield, VA (US);
Keiichi Takanashi, Saga, JP;
Volker Todt, Lake Oswego, OR (US);
Benno Orschel, Salem, OR (US);
Andrzej Buczkowski, Bend, OR (US);
Joel Kearns, Springfield, VA (US);
Keiichi Takanashi, Saga, JP;
Volker Todt, Lake Oswego, OR (US);
Sumco Phoenix Corporation, Phoenix, AZ (US);
Sumco Corporation, Tokyo, JP;
Abstract
A method and apparatus for growing a semiconductor crystal include pulling the semiconductor crystal from melt at a pull speed and modulating the pull speed by combining a periodic pull speed with an average speed. The modulation of the pull speed allows in-situ determination of characteristic temperature gradients in the melt and in the crystal during crystal formation. The temperature gradients may be used to control relevant process parameters that affect morphological stability or intrinsic material properties in the finished crystal such as for instance the target pull speed of the crystal or the melt gap, which determines the thermal gradient in the crystal during growth.