Volker Todt

Title: Innovations by Volker Todt

Introduction

Volker Todt is an accomplished inventor based in Lake Oswego, OR (US). He has made significant contributions to the field of semiconductor crystal growth, holding a total of 4 patents. His work focuses on improving the processes involved in growing high-quality silicon crystals.

Latest Patents

One of his latest patents is titled "Procedure for in-situ determination of thermal gradients at the crystal growth front." This invention involves a method and apparatus for growing a semiconductor crystal by pulling it from melt at a modulated pull speed. This modulation allows for the in-situ determination of temperature gradients, which can be used to control process parameters that affect the stability and properties of the finished crystal.

Another notable patent is the "Method and apparatus for controlling diameter of a silicon crystal ingot in a growth process." This improvement enhances the conventional method of growing monocrystalline silicon ingots by defining an error between a target taper of a meniscus and a measured taper. The invention translates this taper error into a feedback adjustment to the pull speed, thereby optimizing the growth process.

Career Highlights

Volker Todt has worked with prominent companies in the semiconductor industry, including Sumco Phoenix Corporation and Sumco Corporation. His experience in these organizations has contributed to his expertise in crystal growth technologies.

Collaborations

Throughout his career, Volker has collaborated with notable professionals such as Benno Orschel and Joel Kearns. These collaborations have further enriched his work and innovations in the field.

Conclusion

Volker Todt's contributions to semiconductor crystal growth through his patents and collaborations highlight his significant role in advancing technology in this area. His innovative approaches continue to influence the industry and improve the quality of semiconductor materials.