This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Microsemi Soc Corporation. Active years: 2015.
Company Filing History:
Years Active: 2015
Title: The Innovations of Ben A Schmid
Introduction
Ben A Schmid is an accomplished inventor based in Austin, TX (US). He has made significant contributions to the field of semiconductor technology, particularly in the development of radiation-hardened transistors. His work is crucial for applications that require high reliability in harsh environments.
Latest Patents
Ben A Schmid holds 1 patent for his invention titled "TID hardened and single event transient single event latchup resistant MOS transistors and fabrication process." This patent describes a radiation-hardened transistor formed in a p-type body. The active region within the p-type body is defined by a shallow-trench isolation region filled with dielectric material. The design includes spaced-apart source and drain regions that form a channel, with a polysilicon gate aligned and insulated from the channel region. Additionally, a p-type isolation ring separates the outer edges of the source and drain regions from the active region's perimeter, enhancing the transistor's resilience.
Career Highlights
Ben A Schmid is currently employed at Microsemi Soc Corporation, where he continues to innovate in the field of semiconductor devices. His expertise in radiation-hardened technology has positioned him as a key player in the industry.
Collaborations
Throughout his career, Ben has collaborated with notable colleagues such as Fethi Dhaoui and John L McCollum. These partnerships have contributed to the advancement of technology in their respective fields.
Conclusion
Ben A Schmid's contributions to the field of semiconductor technology, particularly through his innovative patent, highlight his role as a significant inventor. His work continues to impact the industry positively.