The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 28, 2015
Filed:
Mar. 04, 2014
Microsemi Soc Corporation, San Jose, CA (US);
Ben A. Schmid, Austin, TX (US);
Fethi Dhaoui, Mountain House, CA (US);
John McCollum, San Jose, CA (US);
Microsemi SoC Corporation, San Jose, CA (US);
Abstract
A radiation-hardened transistor is formed in a p-type body. An active region is disposed within the p-type body and has a perimeter defined by a shallow-trench isolation region filled with a dielectric material. Spaced-apart source and drain regions are disposed in the active region, forming a channel therebetween. A polysilicon gate is disposed above, aligned with, and insulated from the channel region. A p-type isolation ring is disposed in the p-type body separating outer edges of at least one of the source and drain regions from the perimeter of the active region. A body contact is disposed in the p-type isolation ring.