Campbell, CA, United States of America

Behtash Behin-Aein

This inventor holds 6 USPTO granted patents. Top assignees: Globalfoundries Inc., Purdue Research Foundation. Active years: 2013-2018.


% Patents Active = 100.0

Average Co-Inventor Count = 2.3

ph-index = 3

Forward Citations = 30(Granted Patents)


Location History:

  • San Jose, CA (US) (2013)
  • Campbell, CA (US) (2014 - 2018)

Company Filing History:


Years Active: 2013-2018

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6 patents (USPTO):Explore Patents

Title: Behtash Behin-Aein: Innovator in Semiconductor Technology

Introduction

Behtash Behin-Aein is a notable inventor based in Campbell, California. He has made significant contributions to the field of semiconductor technology, holding a total of 6 patents. His work focuses on innovative implementations of neuron and synapse circuits, as well as advanced semiconductor devices.

Latest Patents

One of Behtash Behin-Aein's latest patents is titled "Compact implementation of neuron and synapse with spin switches." This invention discloses a neuron and synapse implementation that incorporates a circuit element featuring first and second nanomagnets and first and second fixed magnets. The first nanomagnet is inductively coupled to a first current-carrying element and is designed to change polarity in response to the current in that element. In one example, the first current-carrying element includes a spin Hall effect substrate. The second nanomagnet is magnetically coupled to the first nanomagnet and is inductively coupled to a second current-carrying element. The first fixed magnet is positioned on the second nanomagnet and has a first fixed polarity, while the second fixed magnet is also on the second nanomagnet and has a second fixed polarity.

Another significant patent is for a "Semiconductor device comprising a multi-layer channel region." This device includes a substrate made of a first semiconductor material, at least one layer of insulating material above the substrate, and a fin structure that includes first, second, and third layers of semiconductor material. The semiconductor materials of these layers differ from the first semiconductor material, and a gate structure surrounds a portion of the fin structure.

Career Highlights

Behtash Behin-Aein has worked with reputable organizations such as the Purdue Research Foundation and Globalfoundries Inc. His experience in these companies has contributed to his expertise in semiconductor technology and innovation.

Collaborations

Throughout his career, Behtash has collaborated with notable individuals, including Supriyo Datta and Bartlomiej Jan Pawlak. These collaborations have further enriched his work and contributions to the field.

Conclusion

Behtash Behin-Aein is a distinguished inventor whose work in semiconductor technology has led to multiple patents and innovative solutions. His contributions continue to influence the industry and pave the way for future advancements.

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