Globalfoundries Inc.

Purdue Research Foundation

Behtash Behin-Aein

Supriyo Datta

Bartlomiej Jan Pawlak

Mehdi Salmani-Jelodar

Sayeef Salahuddin

Vinh Quang Diep

Brian M Sutton

Srikant Srinivasan

Angik Sarkar

A neuron and synapse implementation is disclosed which incorporates a circuit element that includes first and second nanomagnets and first and second fixed magnets. The first nanomagnet is inductively coupled to a first current carrying element, and is configured to change polarity responsive to current in the first current carrying element. In one example, the first current carrying element includes a spin Hall effect substrate. The second nanomagnet is magnetically coupled to the first nanomagnet, and is inductively coupled to a second current carrying element. The first fixed magnet is disposed on the second nanomagnet and has a first fixed polarity, and second fixed magnet disposed on the second nanomagnet and has a second fixed polarity.

Compact implementation of neuron and synapse with spin switches

The device disclosed herein includes, among other things, a substrate made of a first semiconductor material, at least one layer of insulating material positioned above the substrate, a fin structure positioned above the layer of insulating material and the substrate, the fin structure including first, second and third layers of semiconductor material, wherein the semiconductor materials of the first, second and third layers are different than the first semiconductor material, and a gate structure around a portion of the fin structure includes the first, second and third layers of semiconductor material.

Semiconductor device comprising a multi-layer channel region

A circuit element includes first and second nanomagnets and first and second fixed magnets. The first nanomagnet is inductively coupled to a first current carrying element, and is configured to change polarity responsive to current in the first current carrying element. In one example, the first current carrying element includes a spin Hall effect substrate. The second nanomagnet is magnetically coupled to the first nanomagnet, and is inductively coupled to a second current carrying element. The first fixed magnet is disposed on the second nanomagnet and has a first fixed polarity, and second fixed magnet disposed on the second nanomagnet and has a second fixed polarity.

Non-volatile spin switch

One illustrative method disclosed herein includes, among other things, forming a plurality of trenches that define a fin, performing a plurality of epitaxial deposition processes to form first, second and third layers of epi semiconductor material around an exposed portion of the fin, removing the first, second and third layers of epi semiconductor material from above an upper surface of the fin so as to thereby expose the fin, selectively removing the fin relative to the first, second and third layers of epi semiconductor material so as to thereby define two fin structures comprised of the first, second and third layers of epi semiconductor material, and forming a gate structure around a portion of at least one of the fin structures comprised of the first, second and third layers of epi semiconductor material.

Methods of forming a channel region for a semiconductor device by performing a triple cladding process

A computing multi-magnet device and method for solving complex computational problems is provided. Embodiments include a first magnet, a second magnet, and an interconnect between and interconnecting the first and second magnets, the interconnect configured to allow the first and second magnets to communicate via a voltage or current applied to the first and second magnet and conducted by the interconnect. The scalability of computing multi-magnet device provides solutions to algorithms that have exponentially increasing complexity.

Computing multi-magnet based devices and methods for solution of optimization problems

Illustrative embodiments of all-spin logic devices, circuits, and methods are disclosed. In one embodiment, an all-spin logic device may include a first nanomagnet, a second nanomagnet, and a spin-coherent channel extending between the first and second nanomagnets. The spin-coherent channel may be configured to conduct a spin current from the first nanomagnet to the second nanomagnet to determine a state of the second nanomagnet in response to a state of the first nanomagnet.

Growing community of inventors

Campbell, CA, United States of America

Behtash Behin-Aein