The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 25, 2017

Filed:

Dec. 29, 2015
Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Bartlomiej Jan Pawlak, Leuven, BE;

Behtash Behin-Aein, Campbell, CA (US);

Mehdi Salmani-Jelodar, West Lafayette, IN (US);

Assignee:

GLOBALFOUNDRIES Inc., Grand Cayman, KY;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/10 (2006.01); H01L 29/16 (2006.01); H01L 29/20 (2006.01); H01L 29/66 (2006.01); H01L 21/02 (2006.01); H01L 29/161 (2006.01); H01L 29/201 (2006.01);
U.S. Cl.
CPC ...
H01L 29/785 (2013.01); H01L 21/02381 (2013.01); H01L 21/02532 (2013.01); H01L 29/1033 (2013.01); H01L 29/1054 (2013.01); H01L 29/161 (2013.01); H01L 29/201 (2013.01); H01L 29/6681 (2013.01); H01L 29/66795 (2013.01);
Abstract

The device disclosed herein includes, among other things, a substrate made of a first semiconductor material, at least one layer of insulating material positioned above the substrate, a fin structure positioned above the layer of insulating material and the substrate, the fin structure including first, second and third layers of semiconductor material, wherein the semiconductor materials of the first, second and third layers are different than the first semiconductor material, and a gate structure around a portion of the fin structure includes the first, second and third layers of semiconductor material.


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