Hsinchu, Taiwan

Been Chen

This inventor holds 1 USPTO granted patent. Top assignee: United Microelectronics Corp.. Active years: 2011.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Been Chen. Retrieved from https://idiyas.com/inventor/been-chen

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 3(Granted Patents)


Company Filing History:


Years Active: 2011

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1 patent (USPTO):Explore Patents

Title: The Innovations of Been Chen

Introduction

Been Chen is a notable inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology. His work primarily focuses on improving sputtering apparatuses, which are essential in the manufacturing of integrated circuits.

Latest Patents

One of Been Chen's key patents is a "Wafer Supporting Device of a Sputtering Apparatus." This invention includes a pedestal positioned in a sputtering chamber, which is used to load a wafer for sputtering. The device features a deposition ring with a recess located on the peripheral portion of the pedestal, along with a cover ring that has a gate corresponding to the recess. This innovative design enhances the efficiency and effectiveness of the sputtering process.

Career Highlights

Been Chen is currently employed at United Microelectronics Corporation, a leading company in the semiconductor industry. His work at UMC has allowed him to collaborate with other talented professionals, including Yu-Jen Huang and Li-Chun Liang. Together, they contribute to advancements in semiconductor manufacturing technologies.

Collaborations

Due to space constraints, the details of collaborations will not be included.

Conclusion

Been Chen's contributions to the field of semiconductor technology, particularly through his innovative patent, demonstrate his commitment to advancing the industry. His work continues to impact the efficiency of sputtering apparatuses, showcasing the importance of innovation in technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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