Kyoto, Japan

Atsushi Sakurai

This inventor holds 14 USPTO granted patents and 1 published patent application, plus 1 CIPO patent and 1 EPO patent, primarily in Thin Film Technology. Top assignees: Murata Manufacturing Co., Ltd., Murata Mfg. Co., Ltd.. Active years: 1991-2010.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Atsushi Sakurai. Retrieved from https://idiyas.com/inventor/atsushi-sakurai-pvrjwckq

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 14 

% Patents Active = 92.9



Average Co-Inventor Count = 2.1

ph-index = 8

Forward Citations = 156(Granted Patents)


Location History:

  • Nagaokakyo, JP (1996)
  • Kyoto, JP (1991 - 2010)

Company Filing History:


Years Active: 1991-2010

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Areas of Expertise:
Thin Film Capacitor
Ferroelectric Device
Surface Acoustic Wave
Manufacturing Method
Oriented Ferroelectric
Electrode Forming
Metallic Thin Film
Device Production
14 patents (USPTO):Explore Patents

Title: Atsushi Sakurai: Innovator in Thin Film Capacitor Technology

Introduction

Atsushi Sakurai is a prominent inventor based in Kyoto, Japan. He has made significant contributions to the field of electronics, particularly in the development of thin film capacitors. With a total of 14 patents to his name, Sakurai's work has had a substantial impact on the industry.

Latest Patents

One of his latest patents focuses on a thin film capacitor and its manufacturing method. This innovative capacitor includes a substrate, a capacitor portion with an upper conductor, a lower conductor, and a dielectric thin film. Additionally, it features a resin protective layer designed to safeguard the capacitor portion. A barrier layer is strategically placed between the capacitor portion and the resin protective layer. This barrier layer consists of a crystalline dielectric barrier layer that is in contact with the capacitor portion and shares the same composition system as the dielectric thin film. Furthermore, an amorphous inorganic barrier layer made of silicon nitride, which is non-conductive, is formed on the surface of the crystalline dielectric barrier layer. This inorganic barrier layer plays a crucial role in preventing the deterioration of the dielectric thin film's properties by blocking the diffusion of constituent elements from the inorganic barrier layer toward the capacitor portion.

Career Highlights

Sakurai has worked with notable companies in the electronics sector, including Murata Manufacturing Co., Ltd. and Murata Mfg. Co., Ltd. His experience in these organizations has allowed him to refine his skills and contribute to groundbreaking innovations in capacitor technology.

Collaborations

Throughout his career, Atsushi Sakurai has collaborated with talented individuals such as Xiao-min Li and Kosuke Shiratsuyu. These partnerships have fostered a creative environment that has led to the development of advanced technologies.

Conclusion

Atsushi Sakurai's contributions to the field of thin film capacitors exemplify his innovative spirit and dedication to advancing technology. His patents and collaborations continue to influence the electronics industry, showcasing the importance of research and development in creating cutting-edge solutions.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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