Murata Manufacturing Co., Ltd.

Murata Mfg. Co., Ltd.

Atsushi Sakurai

Hideharu Ieki

Kosuke Shiratsuyu

Koji Kimura

Xiao-min Li

Yutaka Takeshima

Yukio Yoshino

Masanobu Nomura

Masato Kobayashi

Hidefumi Nakanishi

Tadahiro Minamikawa

A thin film capacitor including a substrate, a capacitor portion having an upper conductor, a lower conductor, and a dielectric thin film, and a resin protective layer for protecting the capacitor portion. A barrier layer is interposed between the capacitor portion and the resin protective layer. The barrier layer includes a crystalline dielectric barrier layer formed in contact with the capacitor portion and having the same composition system as the dielectric thin film, and an amorphous inorganic barrier layer formed on the surface of the crystalline dielectric barrier layer and composed of silicon nitride having non-conductivity. The inorganic barrier layer prevents deterioration in the properties of the dielectric thin film by blocking diffusion of the constituent elements of the inorganic barrier layer toward the capacitor portion.

Thin film capacitor and manufacturing method therefor

An oriented ferroelectric thin-film device includes a substrate, a conductive thin-film disposed on the substrate, and a ferroelectric thin-film disposed on the conductive thin-film, wherein the conductive thin-film comprises a polycrystalline conductive material, the ferroelectric thin-film comprises a Pb-containing perovskite oxide and includes a first ferroelectric sub-layer and a second ferroelectric sub-layer, the first ferroelectric sub-layer is disposed on the conductive thin-film and has a composition changing in the thickness direction, and the second ferroelectric sub-layer is disposed on the first ferroelectric sub-layer and has a constant composition. The ferroelectric thin-film is oriented in a uniaxial direction such that the c-axis is perpendicular to the substrate. A method for manufacturing the oriented ferroelectric thin-film device includes the steps of forming a polycrystalline conductive thin-film on a substrate, and forming a ferroelectric thin-film on the polycrystalline conductive thin-film.

Oriented ferroelectric thin-film device and method for manufacturing the same

A ferroelectric thin film device comprises an Si substrate; a TiN thin film whose Ti component is partially replaced with Al, the TiN thin film being formed on the Si substrate; and a ferroelectric thin film of an oxide with a perovskite structure formed on the TiN thin film, wherein the amount of Al atoms present at Ti sites of the TiN thin film after partially replacing Ti with Al is within the range from about 1% to 30% and the oxygen atomic content of the TiN thin film is equal to or less than about 5%.

Ferroelectric thin film device and method of producing the same

A ferroelectric thin-film device comprises: a single crystal substrate; a conductive thin film formed on the single crystal substrate; and an oriented ferroelectric oxide thin film having a perovskite structure formed on the conductive thin film. The oriented ferroelectric thin film comprises a first layer having a composition changing from the interface with the conductive thin film in the thickness direction and a second layer having a constant composition formed on the first layer. The composition of the first layer and the composition of the second layer are substantially the same at the boundary between the first layer and the second layer.

Ferroelectric thin-film device and method for producing the same

By using a dual ion-beam sputtering apparatus, an aluminum thin-film is formed on a glass substrate made of an amorphous material. While radiating an ion beam for assisting the film formation from an ion source onto the glass substrate, the aluminum thin-film is formed by depositing the sputtering ions which are generated by radiating an ion beam onto an aluminum target.

Metallic thin film and method of manufacturing the same, and surface acoustic wave device using the method thereof

A ferroelectric thin film device comprises: a Si substrate; a TiN thin film epitaxially grown on the Si substrate in which Ti is partially substituted by Al; a metal thin film epitaxially grown on the TiN thin film; and a ferroelectric thin film grown and oriented on the metal thin film and composed of an oxide having a perovskite structure. The amount of Al substituted at Ti sites in the TiN thin film is about 1 to 30% in terms of Al atoms, and the oxygen content of the TiN thin film is about 5% or less in terms of oxygen atoms.

Ferroelectric thin-film device

Metallic thin flim and method of manufacturing the same, and surface

An electrode forming method for a surface acoustic wave device is adapted to form a film of an electrode material on a piezoelectric substrate to be crystallographically oriented in a constant direction while carrying out ion assistance at prescribed ion energy, in a film formation process employing a film forming method such as evaporation, sputtering, IBS (ion beam sputtering), CVD (chemical vapor deposition), plasma CVD, MBE (molecular beam epitaxy), ICB (ionized cluster beam) or laser ablation.

Electrode forming method for surface acoustic wave device

Interdigital transducers (3, 4) and reflectors (5, 6) are formed on a piezoelectric substrate (2) by an aluminum film. The aluminum film is crystallographically oriented in a constant direction, whereby stressmigration of the aluminum film is suppressed.

Surface acoustic wave device

Interdigital transducers and reflectors are formed on a piezoelectric substrate from an aluminum film. The aluminum film is formed by electron beam deposition at a film forming rate which is controlled to be at least 20 .ANG. per second. The aluminum film formed in this way is crystallographically oriented in a constant direction, whereby stressmigration of the aluminum film is suppressed.

Method of manufacturing surface acoustic wave device

A surface accoustic wave device includes a substrate which is made up of single-crystalline dielectric member and a piezoelectric thin film epitaxially grown thereon. An aluminum electrode defining an interdigital electrode is formed along the interface between the dielectric member and the piezoelectric thin film. This aluminum electrode is formed of an aluminum film which is crystallographically oriented in a constant direction, whereby stressmigration of the aluminum electrode is suppressed, while enabling epitaxial growth of the piezoelectric thin film over the entire surface insert.

Growing community of inventors

Kyoto, Japan

Atsushi Sakurai