Futtsu, Japan

Atsushi Nogami

This inventor holds 3 USPTO granted patents. Top assignee: Nippon Steel Corporation. Active years: 2002-2004.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Atsushi Nogami. Retrieved from https://idiyas.com/inventor/atsushi-nogami-71tbqhss

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 66.7

Average Co-Inventor Count = 6.6

ph-index = 3

Forward Citations = 29(Granted Patents)


Company Filing History:


Years Active: 2002-2004

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3 patents (USPTO):Explore Patents

Title: Innovations by Atsushi Nogami

Introduction

Atsushi Nogami is a notable inventor based in Futtsu, Japan. He has made significant contributions to the field of materials science, particularly in the development of low dielectric constant materials. With a total of three patents to his name, his work has implications for the semiconductor industry.

Latest Patents

Atsushi Nogami's latest patents focus on silica-based low dielectric constant materials. These materials feature three-dimensional network structures containing siloxane backbones, which comprise SiO tetrahedron structural units. The production and use of these materials are particularly relevant as they can be applied as interlayer dielectrics for semiconductor elements and similar applications.

Career Highlights

Atsushi Nogami is currently associated with Nippon Steel Corporation, where he continues to innovate and contribute to advancements in material technology. His expertise in low dielectric constant materials positions him as a key figure in the ongoing evolution of semiconductor technologies.

Collaborations

Some of his coworkers include Noriko Yamada and Toru Takahashi, who collaborate with him on various projects within the company.

Conclusion

Atsushi Nogami's work in developing low dielectric constant materials showcases his innovative spirit and commitment to advancing technology in the semiconductor industry. His contributions are vital for future developments in this field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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