The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 18, 2004

Filed:

Apr. 12, 2002
Applicant:
Inventors:

Noriko Yamada, Futtsu, JP;

Toru Takahashi, Futtsu, JP;

Tadashi Sakon, Futtsu, JP;

Yoichi Matsuzaki, Futtsu, JP;

Atsushi Nogami, Futtsu, JP;

Shingo Katayama, Futtsu, JP;

Ikuko Shiina, Futtsu, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
B05D 3/02 ; C08L 8/304 ; C07F 7/02 ;
U.S. Cl.
CPC ...
B05D 3/02 ; C08L 8/304 ; C07F 7/02 ;
Abstract

Silica-based low dielectric constant materials having three-dimensional network structures containing siloxane backbones which comprise SiO tetrahedron structural units, as well as their production and use. The materials can be applied as interlayer dielectrics for semiconductor elements and the like.


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