Futtsu, Japan

Shingo Katayama


Average Co-Inventor Count = 6.2

ph-index = 3

Forward Citations = 33(Granted Patents)


Location History:

  • Kawasaki, JP (1997)
  • Futtsu, JP (2003 - 2004)

Company Filing History:


Years Active: 1997-2004

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3 patents (USPTO):Explore Patents

Title: Innovations by Shingo Katayama

Shingo Katayama is a notable inventor based in Futtsu, Japan. He has made significant contributions to the field of materials science, particularly in the development of low dielectric constant materials. With a total of 3 patents to his name, Katayama's work has implications for the semiconductor industry.

Latest Patents

Katayama's latest patents focus on silica-based low dielectric constant materials. These materials feature three-dimensional network structures containing siloxane backbones, which comprise SiO tetrahedron structural units. The production and use of these materials are particularly relevant as they can be applied as interlayer dielectrics for semiconductor elements and similar applications.

Career Highlights

Shingo Katayama is currently associated with Nippon Steel Corporation, where he continues to innovate and develop new materials. His expertise in low dielectric constant materials has positioned him as a key figure in advancing technology in this area.

Collaborations

Some of his notable coworkers include Noriko Yamada and Toru Takahashi. Their collaborative efforts contribute to the ongoing research and development within their field.

Conclusion

In summary, Shingo Katayama's work in low dielectric constant materials represents a significant advancement in materials science. His contributions are vital for the future of semiconductor technology.

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