Futtsu, Japan

Ikuko Shiina


Average Co-Inventor Count = 7.0

ph-index = 2

Forward Citations = 21(Granted Patents)


Company Filing History:


Years Active: 2003-2004

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2 patents (USPTO):Explore Patents

Title: Ikuko Shiina: Innovator in Low Dielectric Constant Materials

Introduction

Ikuko Shiina is a notable inventor based in Futtsu, Japan. He has made significant contributions to the field of materials science, particularly in the development of low dielectric constant materials. With a total of 2 patents to his name, his work has implications for the semiconductor industry.

Latest Patents

Ikuko Shiina's latest patents focus on silica-based low dielectric constant materials. These materials feature three-dimensional network structures containing siloxane backbones, which comprise SiO tetrahedron structural units. The production and use of these materials are crucial as they can be applied as interlayer dielectrics for semiconductor elements and similar applications.

Career Highlights

Ikuko Shiina is associated with Nippon Steel Corporation, where he has been able to leverage his expertise in materials science. His innovative work has positioned him as a key figure in the development of advanced materials for electronic applications.

Collaborations

Some of his notable coworkers include Noriko Yamada and Toru Takahashi. Their collaborative efforts contribute to the ongoing research and development in the field of low dielectric constant materials.

Conclusion

Ikuko Shiina's contributions to the field of materials science, particularly in low dielectric constant materials, highlight his role as an influential inventor. His work continues to impact the semiconductor industry positively.

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