The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 28, 2002

Filed:

Jun. 23, 2000
Applicant:
Inventors:

Jiro Kondo, Futtsu, JP;

Haruo Shimada, Futtsu, JP;

Shinji Tokumaru, Futtsu, JP;

Ryuji Watanabe, Futtsu, JP;

Atsushi Nogami, Futtsu, JP;

Akihito Kiyose, Kimitsu, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C01B 3/3037 ;
U.S. Cl.
CPC ...
C01B 3/3037 ;
Abstract

It is possible to produce high purity Si by heating solid SiO at a temperature of at least 1000° C. and lower than 1730° C., for a disproportionation reaction in which the SiO solid is decomposed to liquid or solid Si and solid SiO , and the produced Si is separated from the SiO and/or SiO. The SiO solid can be obtained by a process whereby a starting mixture of carbon C, silicon Si or ferrosilicon, or a combination thereof, with SiO is heated to generate SiO gas-containing gas, and the SiO-containing gas is cooled to produce SiO solid.


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