Yokkaichi, Japan

Atsushi Konno


Average Co-Inventor Count = 1.8

ph-index = 1

Forward Citations = 2(Granted Patents)


Location History:

  • Yokkaichi, JP (2018)
  • Yokkaichi Mie, JP (2020)

Company Filing History:


Years Active: 2018-2020

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3 patents (USPTO):

Title: Atsushi Konno: Innovator in Semiconductor Memory Technology

Introduction

Atsushi Konno is a prominent inventor based in Yokkaichi, Japan. He has made significant contributions to the field of semiconductor memory devices, holding a total of 3 patents. His work has been instrumental in advancing technology in this critical area.

Latest Patents

Atsushi Konno's latest patents include innovative designs for semiconductor memory devices. One embodiment describes a semiconductor memory device that features a first electrode layer with distinct areas and a connection area. This design incorporates a plurality of semiconductor pillars arranged in an array, enhancing the device's functionality. Another patent outlines a semiconductor memory device comprising a stacked body with control gate electrodes and a semiconductor layer. This design includes multiple layers of barrier metals and insulating materials, showcasing Konno's expertise in creating efficient semiconductor structures.

Career Highlights

Atsushi Konno is currently employed at Toshiba Memory Corporation, where he continues to develop cutting-edge technologies in semiconductor memory. His work has not only contributed to the company's success but has also positioned him as a key figure in the industry.

Collaborations

Throughout his career, Atsushi has collaborated with notable colleagues, including Shigeki Kobayashi and Satoshi Konagai. These partnerships have fostered innovation and have led to the development of advanced semiconductor technologies.

Conclusion

Atsushi Konno's contributions to semiconductor memory technology are noteworthy and reflect his dedication to innovation. His patents and work at Toshiba Memory Corporation highlight his role as a leading inventor in this field.

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