Rehovot, Israel

Assaf Duvdevan

This inventor holds 1 USPTO granted patent. Top assignee: Applied Materials Israel Limited. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Assaf Duvdevan. Retrieved from https://idiyas.com/inventor/assaf-duvdevan

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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Average Co-Inventor Count = 1.0

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Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Assaf Duvdevan: Inventor in Charged-Particle Measurement

Introduction

Assaf Duvdevan is an inventor based in Rehovot, Israel, associated with Applied Materials Israel Limited. His patent work addresses measurement and compensation techniques for charged-particle systems.

Latest Patents

The provided information lists one patent for Duvdevan: “Overlay Target Measurement and Shift Compensation in Charged Particle Systems and Related Methods.” The invention describes a method and system for compensating for differences in the response times of sensor types in a charged-particle system.

The method obtains secondary-electron and backscattered-electron images of an overlay target using different scan patterns. It determines shifts for each image type through registration of the first images with rotated second images, then calculates a compensation shift from those measurements. The images are acquired with a pixel grab period shorter than the response period of the backscattered-electron sensor used to generate the first backscattered-electron image.

Career Highlights

Duvdevan’s listed patent reflects work on overlay-target measurement and sensor-response compensation. The provided information associates him with Applied Materials Israel Limited and records 1 patent.

Collaborations

The provided information names Igor Isakov and Harel Azulay as Duvdevan’s coworkers. It does not specify their roles in the patent or describe particular collaborative projects.

Conclusion

Assaf Duvdevan’s listed invention focuses on improving overlay measurements in charged-particle systems by accounting for differences in sensor response times.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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