The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 06, 2026

Filed:

Jul. 03, 2024
Applicant:

Applied Materials Israel Ltd., Rehovot, IL;

Inventors:

Igor Isakov, Rehovot, IL;

Assaf Duvdevan, Rehovot, IL;

Harel Azulay, Rehovot, IL;

Udi Abrahamov, Beer Yaakov, IL;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01N 23/2206 (2018.01); G01N 23/203 (2006.01); G01N 23/2251 (2018.01);
U.S. Cl.
CPC ...
G01N 23/2206 (2013.01); G01N 23/203 (2013.01); G01N 23/2251 (2013.01); G01N 2223/401 (2013.01); G01N 2223/505 (2013.01); G01N 2223/6116 (2013.01);
Abstract

A method and system that compensate for differences in response times of different types of sensors of a charged particle system. This involves obtaining first and second secondary electron images and backscattered electron images of an overlay target, scanned with an illuminating electron beam in accordance with first and second scan patterns. A secondary electron shift and a backscattered electron shift are determined based on a registration between the first and a rotated second images. A compensation shift is determined based on these shifts. The images are acquired using a pixel grab period lower than a response period of a backscattered electron sensor used to generate the first backscattered electron image.


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