This inventor holds 1 USPTO granted patent. Top assignee: International Business Machines Corporation. Active years: 2001.
Company Filing History:
Years Active: 2001
Title: Arne Watson Ballamine: Innovator in High Temperature Oxide Deposition
Introduction
Arne Watson Ballamine is a notable inventor based in Gold Spring, NY (US). He has made significant contributions to the field of semiconductor technology, particularly in the development of high temperature oxide (HTO) deposition processes.
Latest Patents
Arne holds a patent for HTO (high temperature oxide) deposition for capacitor dielectrics. This innovative process utilizes rapid thermal chemical vapor deposition (RTCVD) to create reliable HTO dielectrics. The method involves a low pressure environment and a high ratio of reactants, specifically an oxygen-containing gas to a silane-containing gas. The reliable HTO is formed at temperatures of about 500°C or above, under a pressure of less than 80 Torr, and in the presence of at least one oxygen-containing reactant and one silane-containing reactant. The ratio of these reactants is approximately 25:1 or greater. This technology is crucial for semiconductor devices, including capacitors and transistors, which utilize the high temperature oxide as a dielectric material.
Career Highlights
Arne Watson Ballamine is associated with the International Business Machines Corporation (IBM), where he has contributed to advancements in semiconductor technology. His work has been instrumental in enhancing the reliability and performance of electronic components.
Collaborations
Arne has collaborated with notable colleagues, including Kevin K Chan and Douglas Duane Coolbaugh, to further innovate in the field of semiconductor technology.
Conclusion
Arne Watson Ballamine's contributions to high temperature oxide deposition have paved the way for advancements in semiconductor devices. His innovative approach continues to influence the industry and enhance the performance of electronic components.