The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 17, 2001
Filed:
Feb. 24, 2000
Arne Watson Ballamine, Gold Spring, NY (US);
Kevin K. Chan, Staten Island, NY (US);
Douglas Duane Coolbaugh, Essex Junction, VT (US);
Donna Kaye Johnson, Underhill, VT (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Reliable HTO (High Temperature Oxide) dielectrics are provide by a rapid thermal chemical vapor deposition (RTCVD) process in which a low pressure and a high ratio of reactants, e.g., oxygen-containing gas to silane-containing gas, is employed. Specifically, the reliable HTO is formed by a rapid thermal chemical vapor deposition at temperatures of from about 500° C. or above, said rapid thermal chemical vapor deposition process being carried out at a pressure of less than 80 Torr and in the presence of at least one oxygen-containing reactant and at least one silane-containing reactant, said reactants having a ratio of oxygen-containing to silane-containing of about 25:1 or greater. Semiconductor devices such as capacitors and transistors that include at least a layer of the high temperature oxide of the present invention used as a dielectric material are also provided.