Dortmund, Germany

Arnd Ten Have


 

Average Co-Inventor Count = 1.0

ph-index = 2

Forward Citations = 5(Granted Patents)


Location History:

  • Dortmund, DE (2015)
  • Dortnund, DE (2016)

Company Filing History:


Years Active: 2015-2016

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3 patents (USPTO):Explore Patents

Title: Arnd Ten Have: Innovator in Semiconductor Technology

Introduction

Arnd Ten Have is a notable inventor based in Dortmund, Germany. He has made significant contributions to the field of semiconductor technology, holding a total of three patents. His work focuses on developing components that are sensitive to mechanical stresses, which are crucial for various applications in micro-electromechanical systems.

Latest Patents

One of his latest patents is for a semiconductor component designed for use in pressure or acceleration sensors. This component features a semiconductor substrate with an active region created through ion implantation. The design includes a semiconducting channel region with defined dimensions, ensuring optimal performance in sensitive applications.

Another significant patent involves a micro-electromechanical semiconductor component that includes a stress measuring element and stiffening braces. This innovative design incorporates a cavity within a semiconductor substrate, with trenches and bending webs that enhance flexibility. The component is engineered to measure mechanical stresses effectively, showcasing Arnd's expertise in creating advanced semiconductor solutions.

Career Highlights

Arnd Ten Have is currently associated with Elmos Semiconductor AG, a company known for its cutting-edge semiconductor solutions. His work at Elmos has allowed him to push the boundaries of technology, contributing to the development of innovative products that meet the demands of modern applications.

Conclusion

Arnd Ten Have's contributions to semiconductor technology highlight his role as a leading inventor in the field. His patents reflect a commitment to innovation and excellence, making a lasting impact on the industry.

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