Perttula, Finland

Antti Haarahiltunen

This inventor holds 4 USPTO granted patents and 1 published patent application and 2 EPO patents. Top assignees: Aalto University Foundation, Aalto-Korkeakoulusaatio, Elfys Oy. Active years: 2014-2023.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Antti Haarahiltunen. Retrieved from https://idiyas.com/inventor/antti-haarahiltunen

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 4 

% Patents Active = 75.0

 

Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2014-2023

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4 patents (USPTO):Explore Patents

Title: The Innovative Journey of Antti Haarahiltunen

Introduction

Antti Haarahiltunen, an accomplished inventor based in Perttula, Finland, has made significant contributions to the field of semiconductor technology. With a remarkable portfolio of four patents, Haarahiltunen's work primarily revolves around advanced radiation sensor elements and photodetector structures, reflecting his expertise in optical technologies.

Latest Patents

Haarahiltunen's latest patents include innovative designs that focus on enhancing the performance of radiation sensors and photodetectors. One of his notable inventions is a **Radiation Sensor Element and Method**, which incorporates a semiconductor substrate featuring a bulk refractive index. This design includes a front surface, a back surface extending along a base plane, and multiple pixel portions. Each pixel portion is equipped with a collection region on the back and a textured region on the front, where high aspect ratio nanostructures create an optical conversion layer. This layer effectively reduces reflection of light incident on the pixel portions.

Another significant patent is the **Photodetector Structures and Manufacturing the Same**, where Haarahiltunen develops a similar approach with a semiconductor substrate and high aspect ratio nanostructures. This invention also features an optical conversion layer that optimizes light reception by gradually changing the refractive index, thus enhancing the efficiency of the photodetector.

Career Highlights

Haarahiltunen has been associated with notable institutions throughout his career, including the Aalto University Foundation and Elfys Oy. His experience in these organizations has played a crucial role in shaping his innovative approach to semiconductor and optical technologies.

Collaborations

During his journey as an inventor, Haarahiltunen has collaborated with talented professionals, including Hele Savin and Mikko Juntunen. Such collaborations have undoubtedly contributed to the successful development and refinement of his groundbreaking inventions.

Conclusion

Antti Haarahiltunen exemplifies the spirit of innovation through his significant contributions to semiconductor technology. With multiple patents to his name, his advancements in radiation sensors and photodetectors have set a precedent for future developments in the field. As he continues to work at the intersection of technology and creativity, the impact of his inventions will surely resonate in the industry for years to come.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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