The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 30, 2018

Filed:

Jun. 10, 2016
Applicant:

Aalto University Foundation, Espoo, FI;

Inventors:

Mikko Juntunen, Kirkkonummi, FI;

Hele Savin, Espoo, FI;

Päivikki Repo, Vantaa, FI;

Ville Vähänissi, Vantaa, FI;

Antti Haarahiltunen, Perttula, FI;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/102 (2006.01); H01L 31/0216 (2014.01); H01L 31/103 (2006.01); H01L 31/0224 (2006.01); H01L 31/0236 (2006.01); H01L 31/028 (2006.01); H01L 31/18 (2006.01);
U.S. Cl.
CPC ...
H01L 31/02161 (2013.01); H01L 31/028 (2013.01); H01L 31/02363 (2013.01); H01L 31/022466 (2013.01); H01L 31/103 (2013.01); H01L 31/1804 (2013.01); H01L 31/1884 (2013.01);
Abstract

A photodetector structure comprises a semiconductor substrate extending substantially along a horizontal plane and having a bulk refractive index and a front surface defining a front side of the photodetector structure. The front surface comprises high aspect ratio nanostructures forming an optical conversion layer having an effective refractive index gradually changing towards the bulk refractive index to reduce reflection of light incident on the photodetector structure from the front side thereof. Further, the semiconductor substrate comprises an induced junction.


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