Aix-en-Provence, France

Antonin Chollet

This inventor holds 1 USPTO granted patent and 3 published patent applications. Top assignee: Stmicroelectronics International N.v.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Antonin Chollet. Retrieved from https://idiyas.com/inventor/antonin-chollet

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 1 

% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Antonin Chollet: Semiconductor Device Innovation

Introduction

Antonin Chollet is an inventor based in Aix-en-Provence, France. His patent work includes a method for manufacturing semiconductor devices, and he is associated with STMicroelectronics International N.V.

Latest Patents

Chollet is credited with 1 patent, titled “Semiconductor Device and Method of Forming the Same.” The invention describes depositing a protective layer over two conductive features, covering their sidewalls and top surfaces. A portion of the layer between the features is then removed, and an intermetal dielectric layer is formed in the space between them. The method addresses the formation of protective and dielectric layers within a semiconductor device.

Career Highlights

Chollet’s listed patent reflects work in semiconductor manufacturing and device fabrication. His association with STMicroelectronics International N.V. connects his inventive work with a company active in the semiconductor industry.

Collaborations

His listed coworkers include Julien Amouroux and Pascal Fornara. Their names provide context for the professional network associated with Chollet’s work.

Conclusion

Antonin Chollet’s patent focuses on a semiconductor fabrication method involving protective and intermetal dielectric layers, highlighting his contribution to device manufacturing.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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