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For the Inventor, By the Inventor

Boise, ID, United States of America

Anton P Eppich

USPTO Granted Patents = 16 

Average Co-Inventor Count = 1.3

ph-index = 4

Forward Citations = 131(Granted Patents)


Company Filing History:

goldMedal16 out of 37,972 
 
Micron Technology Incorporated
 patents

Years Active: 2006-2024

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16 patents (USPTO):Explore Patents
1. 12114489 - Vertical access line in a folded digitline sense amplifier (2024-10-08),
2. 11264320 - Integrated assemblies (2022-03-01),
3. 9128383 - Sub-resolution assist devices and methods (2015-09-08),
4. 8952437 - DRAM cell design with folded digitline sense amplifier (2015-02-10),
5. 8736811 - Sub-resolution assist devices and methods (2014-05-27),
6. 8716772 - DRAM cell design with folded digitline sense amplifier (2014-05-06),
7. 8354317 - Relaxed-pitch method of aligning active area to digit line (2013-01-15),
8. 8183615 - Memory cell with a vertically oriented transistor coupled to a digit line and method of forming the same (2012-05-22),
9. 7961292 - Sub-resolution assist devices and methods (2011-06-14),
10. 7915116 - Relaxed-pitch method of aligning active area to digit line (2011-03-29),
11. 7825452 - Memory cell with buried digit line (2010-11-02),
12. 7613025 - Dram cell design with folded digitline architecture and angled active areas (2009-11-03),
13. 7541632 - Relaxed-pitch method of aligning active area to digit line (2009-06-02),
14. 7349232 - [object Object] (2008-03-25),
15. 7271057 - Memory array with overlapping buried digit line and active area and method for forming same (2007-09-18),

Title: Anton P Eppich: Innovator in Memory Technology

Introduction

Anton P Eppich is a notable inventor based in Boise, ID (US), recognized for his contributions to memory technology. With a total of 16 patents to his name, Eppich has made significant advancements in the field of semiconductor memory systems.

Latest Patents

Eppich's latest patents include innovative designs such as the "Vertical access line in a folded digitline sense amplifier." This patent describes apparatuses and methods that enhance the functionality of memory cells by utilizing vertical access lines. The design allows for adjacent memory cells to share digitline contacts, optimizing space and efficiency. Another significant patent is related to "Integrated assemblies," which outlines a structure involving true and complementary digit-lines, improving the coupling of semiconductor features and enhancing memory performance.

Career Highlights

Eppich is currently employed at Micron Technology Incorporated, a leading company in semiconductor manufacturing. His work focuses on developing advanced memory solutions that push the boundaries of current technology. His innovative designs have contributed to the evolution of memory systems, making them more efficient and reliable.

Collaborations

Eppich collaborates with fellow inventor Fei Wang, working together to advance the field of memory technology. Their combined expertise fosters an environment of innovation and creativity, leading to groundbreaking developments in their projects.

Conclusion

Anton P Eppich stands out as a key figure in the realm of memory technology, with a strong portfolio of patents and a commitment to innovation. His work at Micron Technology Incorporated continues to shape the future of semiconductor memory systems.

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