Location History:
- Bengaluru, IN (2020)
- Karnataka Bangalore, IN (2022)
Company Filing History:
Years Active: 2020-2022
Title: Ankit Soni: Innovator in High Electron Mobility Transistors
Introduction
Ankit Soni is a prominent inventor based in Bengaluru, India. He has made significant contributions to the field of semiconductor technology, particularly in the development of High Electron Mobility Transistors (HEMTs). With a total of 2 patents to his name, Soni is recognized for his innovative approaches to enhancing transistor performance.
Latest Patents
Ankit Soni's latest patents include a High Electron Mobility Transistor (HEMT) with a Reduced Surface Field (RESURF) junction. This invention features a HEMT that includes a source electrode at one end and a drain electrode at the other. A gate electrode is positioned between these two electrodes, with a RESURF junction extending from one end to the other. The design allows for a buried channel layer to form in the RESURF junction when a positive voltage is applied to the gate electrode. The junction comprises an n-type Gallium Nitride (GaN) layer and a p-type GaN layer, enhancing the transistor's efficiency.
Another notable patent is the enhancement mode High Electron Mobility Transistor (HEMT), which introduces an oxide (AlTiO) that emulates a p-type gate. This innovative structure combines p-GaN technology with the proposed oxide for enhanced operation. The hybrid gate stack allows for threshold voltage tuning from negative to positive by adjusting the p-doping composition. The developed p-type oxide enables the e-mode device to achieve an ON current of approximately 400 mA/mm, with a sub-threshold slope of 73 mV/dec and gate leakage below 200 nA/mm at the OFF-state breakdown.
Career Highlights
Ankit Soni is affiliated with the Indian Institute of Science, where he conducts research and development in semiconductor technologies. His work has garnered attention for its potential applications in various electronic devices, contributing to advancements in the field.
Collaborations
Ankit collaborates with notable colleagues, including Mayank Shrivastava and Srinivasan Raghavan. Their combined expertise fosters a dynamic research environment that encourages innovation and the development of cutting-edge technologies.
Conclusion
Ankit Soni's contributions to the field of High Electron Mobility Transistors exemplify his commitment to innovation in semiconductor technology. His patents reflect a deep understanding of material science
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