Indian Institute of Science

Ankit Soni

Mayank Shrivastava

Srinivasan Raghavan

Navakanta Bhat

Rohith Soman

Sayak Dutta Gupta

Navakant Bhat

A High Electron Mobility Transistor (HEMT) having a reduced surface field (RESURF) junction is provided. The HEMT includes a source electrode at a first end and a drain electrode at a second end. A gate electrode is provided between the source electrode and the drain electrode. A reduced surface field (RESURF) junction extends from the first end to the second end. The gate electrode is provided above the RESURF junction. A buried channel layer is formed in the RESURF junction on application of a positive voltage at the gate electrode. The RESURF junction includes an n-type Gallium nitride (GaN) layer and a p-type GaN layer. The n-type GaN layer is provided between the p-type GaN layer and the gate electrode.

High electron mobility transistor (HEMT) with RESURF junction

The present disclosure provides an improved enhancement mode field effect transistor (FET) having an oxide (AlTiO) emulating p-type gate. The present disclosure provides a novel enhancement mode High Electron Mobility Transistor (HEMT) structure with AlTiO Gate Oxide Engineering as Replacement of p-GaN Gate. In an aspect, the present disclosure provides a hybrid gate stack that combines p-GaN technology with the proposed oxide for e-mode operation. The HEMT structure with AlTiO Gate oxide provides a threshold voltage tuning from negative to positive by changing p-doping composition. Using a developed p-type oxide, e-mode device shows ON current &#x2dc;400 mA/mm, sub-threshold slope of 73 mV/dec, R=8.9 &#x3a9;mm, interface trap density &#x3c;10mmeVand gate leakage below 200 nA/mm at the OFF-state breakdown.

Enhancement mode high electron mobility transistor (HEMT)

Growing community of inventors

Bengaluru, India

Ankit Soni