Company Filing History:
Years Active: 2003-2008
Title: Anke Krasemann: Innovator in Semiconductor Technology
Introduction
Anke Krasemann is a prominent inventor based in Dresden, Germany. She has made significant contributions to the field of semiconductor technology, particularly in the development of methods for forming trench memory cell structures for DRAMs. With a total of 6 patents to her name, her work has had a substantial impact on the industry.
Latest Patents
One of her latest patents is titled "Method for forming trench memory cell structures for DRAMS." This invention relates to a method for creating trench memory cell structures that include trench capacitors and planar selection transistors. The process involves a self-aligned implantation for forming a reinforcement implant, which enhances the electrical connection of a storage electrode of a trench capacitor to a first source/drain zone of the respective selection transistor. The method also details a two-step etch process for forming an isolation layer and manufacturing a trench capacitor, ensuring uniformity in thickness and sufficient collar oxide thickness for deep trench capacitors used in DRAM devices.
Career Highlights
Anke Krasemann has established herself as a key figure in her field through her innovative work at Infineon Technologies AG. Her expertise in semiconductor technology has led to advancements that are crucial for the development of modern memory devices.
Collaborations
Anke collaborates with talented coworkers, including Martin Schrems and Moritz Haupt, who contribute to her projects and enhance the innovative environment at Infineon Technologies AG.
Conclusion
Anke Krasemann's contributions to semiconductor technology exemplify her dedication to innovation and excellence. Her patents and collaborative efforts continue to shape the future of memory technology.