The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 10, 2006
Filed:
Jun. 24, 2002
Christian Drabe, Dresden, DE;
Jana Haensel, Dresden, DE;
Anke Krasemann, Dresden, DE;
Barbara Lorenz, Dresden, DE;
Thomas Morgenstern, Dresden, DE;
Torsten Schneider, Ottendorf-Okrilla, DE;
Bruno Spuler, München, DE;
Christian Drabe, Dresden, DE;
Jana Haensel, Dresden, DE;
Anke Krasemann, Dresden, DE;
Barbara Lorenz, Dresden, DE;
Thomas Morgenstern, Dresden, DE;
Torsten Schneider, Ottendorf-Okrilla, DE;
Bruno Spuler, München, DE;
Infineon Technologies AG, , DE;
Abstract
A two-step etch process is used to form a vertical collar oxide within the upper portion of a trench capacitor. The first step uses CF/SiF/Ochemistry and ends when the bottom of the collar within the trench is opened although a thin oxide layer still remains on the surface of the PAD-nitride. The second etch step uses CFchemistry to completely remove the remaining silicon oxide layer. The process provides a good uniformity in thickness of the PAD-nitride layer and sufficient collar oxide thickness in the very top section of the collar oxide. The process is applicable for manufacturing deep trench capacitors for DRAM devices.