Anirudhan Chandrasekaran

Title: Anirudhan Chandrasekaran: Innovator in Plasma Deposition Technology

Introduction

Anirudhan Chandrasekaran is a notable inventor based in Scottsdale, AZ, who has made significant contributions to the field of material science. He holds a patent that showcases his innovative approach to the selective deposition of materials, particularly those comprising silicon and oxygen.

Latest Patents

Chandrasekaran's patent focuses on the selective deposition of material using plasma. The patent describes methods and vapor deposition assemblies for selectively depositing silicon and oxygen on a substrate's surface through a cyclic deposition process. The process involves placing a substrate in a reaction chamber, introducing a metal or metalloid catalyst in vapor form, and using a silicon precursor that includes an alkoxy silane compound. A plasma is then introduced to create reactive species that facilitate the formation of silicon-oxygen material on the substrate's surface. The methods may also include subcycles to adjust the proportions of the material components, enhancing the precision of the deposition process.

Career Highlights

Chandrasekaran is associated with Asm IP Holding B.V., where he applies his expertise in plasma deposition technology. His work has contributed to advancements in the field, particularly in the development of innovative methods for material deposition.

Collaborations

Chandrasekaran has collaborated with notable colleagues, including Viraj Madhiwala and Daniele Chiappe, who share his commitment to advancing technology in material science.

Conclusion

Anirudhan Chandrasekaran is a distinguished inventor whose work in plasma deposition technology has the potential to impact various industries. His innovative methods for selectively depositing materials demonstrate his expertise and dedication to advancing material science.