The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 18, 2025
Filed:
Sep. 29, 2022
Asm Ip Holding, B.v., Almere, NL;
Eva Tois, Espoo, FI;
Daniele Chiappe, Espoo, FI;
Marko Tuominen, Helsinki, FI;
Viraj Madhiwala, Helsinki, FI;
Charles Dezelah, Helsinki, FI;
Yonggyu Han, Seoul, KR;
Anirudhan Chandrasekaran, Scottsdale, AZ (US);
Shaoren Deng, Ghent, BE;
ASM IP Holding B.V., Almere, NL;
Abstract
The present disclosure relates to methods and apparatuses for the manufacture of semiconductor devices. More particularly, the disclosure relates to methods and apparatuses for depositing an organic layer selectively on a substrate comprising at least two different surfaces. The process comprises providing a substrate in a reaction chamber, providing a first vapor-phase precursor in the reaction chamber, and providing a second vapor-phase precursor in the reaction chamber. In the method, the first and second vapor-phase precursors form the organic material selectively on the first surface relative to the second surface, and the first vapor-phase precursor comprises a diamine compound comprising at least five carbon atoms and the amine groups being attached to non-adjacent carbon atoms.