The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 28, 2025

Filed:

Jan. 12, 2023
Applicant:

Asm Ip Holding, B.v., Almere, NL;

Inventors:

Shaoren Deng, Ghent, BE;

David Kurt De Roest, Leuven, BE;

Vincent Vandalon, Heverlee, BE;

Anirudhan Chandrasekaran, Scottsdale, AZ (US);

Yonggyu Han, Leuven, BE;

Marko Tuominen, Helsinki, FI;

Assignee:

ASM IP Holding B.V., Almere, NL;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/02 (2006.01); C23C 16/04 (2006.01); C23C 16/30 (2006.01); C23C 16/455 (2006.01); C23C 16/513 (2006.01); C23C 16/56 (2006.01); H01L 21/033 (2006.01);
U.S. Cl.
CPC ...
C23C 16/042 (2013.01); C23C 16/0227 (2013.01); C23C 16/0272 (2013.01); C23C 16/04 (2013.01); C23C 16/30 (2013.01); C23C 16/45523 (2013.01); C23C 16/513 (2013.01); C23C 16/56 (2013.01); H01L 21/0337 (2013.01);
Abstract

The disclosure relates to the manufacture of semiconductor devices, especially to methods and processing assemblies for forming a patterned structure on a substrate. The methods comprise providing the substrate comprising a first structure into a reaction chamber, wherein a surface of the first structure comprises a first material and the substrate comprises a second material, and selectively depositing a conformal passivation layer on the first material relative to the second material to cover the first structure, and selectively depositing an etch-stop layer on the second material relative to the passivation layer. In some embodiments, a multiple patterning or a tone reversal of a pattern may be performed using the methods and deposition assemblies of the disclosure.


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