This inventor holds 1 USPTO granted patent and 1 EPO patent. Top assignee: Globalfoundries U.S. Inc.. Active years: 2026.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2026
Title: Innovations of Anastasia Voronova
Introduction
Anastasia Voronova is an accomplished inventor based in Dresden, Germany. She has made significant contributions to the field of memory elements in electronic devices. Her innovative work has led to the development of a unique patent that addresses the confinement of metal within memory structures.
Latest Patents
Anastasia Voronova holds a patent for a "Structure and method for memory element to confine metal with spacer." This patent describes a method that provides a structure for a memory element designed to confine a metal, such as a remaining portion of metallic residue, using a spacer. The structure includes a memory element positioned over a first portion of an insulator layer, with a sidewall extending over the insulator layer. The spacer is strategically placed adjacent to the sidewall of the memory element and on the first portion of the insulator layer. Additionally, a metal-dielectric layer is incorporated within the interface between the spacer and the sidewall or the interface between the spacer and the first portion of the insulator layer. The insulator layer features a second portion adjacent to the first, which does not include the memory element, spacer, or metal-dielectric layer.
Career Highlights
Anastasia is currently employed at GlobalFoundries U.S. Inc., where she continues to push the boundaries of innovation in semiconductor technology. Her work is pivotal in enhancing the performance and efficiency of memory elements used in various electronic applications.
Collaborations
Anastasia collaborates with her coworker, Suk Hee Jang, who is also a talented professional in the field. Together, they contribute to advancing technology and developing new solutions in their area of expertise.
Conclusion
Anastasia Voronova's innovative contributions to memory element technology exemplify her dedication to advancing the field of electronics. Her patent and ongoing work at GlobalFoundries U.S. Inc. highlight her role as a key inventor in the industry.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile