Yongin-si, South Korea

Anass Benayad



Average Co-Inventor Count = 4.6

ph-index = 3

Forward Citations = 21(Granted Patents)


Company Filing History:


Years Active: 2013-2018

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5 patents (USPTO):Explore Patents

Title: Anass Benayad: Innovator in Active Materials and Semiconductor Devices

Introduction

Anass Benayad is a prominent inventor based in Yongin-si, South Korea. He has made significant contributions to the fields of active materials and semiconductor devices. With a total of 5 patents to his name, Benayad's work is recognized for its innovative approaches and practical applications.

Latest Patents

Benayad's latest patents include a method for preparing an active material electrode that incorporates a vanadium oxide. This electrode is crucial for the development of advanced secondary batteries. Additionally, he has patented a method for forming thin films that are essential in semiconductor devices. This method involves using a metal oxynitride, such as zinc oxynitride, and treating the thin film with inert gas ions to enhance its properties. The treatment can be performed through various processes, including sputtering and plasma treatment.

Career Highlights

Throughout his career, Anass Benayad has worked with notable companies, including Samsung Electronics Co., Ltd. and Snur & Db Foundation. His experience in these organizations has allowed him to refine his skills and contribute to groundbreaking projects in technology and materials science.

Collaborations

Benayad has collaborated with talented individuals in his field, including coworkers Eun-ha Lee and Victor Roev. These collaborations have fostered an environment of innovation and creativity, leading to advancements in their respective areas of expertise.

Conclusion

Anass Benayad's contributions to active materials and semiconductor devices highlight his role as a key innovator in the industry. His patents and collaborations reflect a commitment to advancing technology and improving the efficiency of modern devices.

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