The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 23, 2013
Filed:
Sep. 01, 2010
Jae-cheol Lee, Suwon-si, KR;
Chang-seung Lee, Yongin-si, KR;
Jae-gwan Chung, Seoul, KR;
Eun-ha Lee, Seoul, KR;
Anass Benayad, Yongin-si, KR;
Sang-wook Kim, Yongin-si, KR;
Se-jung OH, Seoul, KR;
Jae-cheol Lee, Suwon-si, KR;
Chang-seung Lee, Yongin-si, KR;
Jae-gwan Chung, Seoul, KR;
Eun-ha Lee, Seoul, KR;
Anass Benayad, Yongin-si, KR;
Sang-wook Kim, Yongin-si, KR;
Se-jung Oh, Seoul, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
SNU R&DB Foundation, Seoul, KR;
Abstract
Transistors and electronic apparatuses including the same are provided, the transistors include a channel layer on a substrate. The channel layer includes a zinc (Zn)-containing oxide. The transistors include a source and a drain, respectively, contacting opposing ends of the channel layer, a gate corresponding to the channel layer, and a gate insulating layer insulating the channel layer from the gate. The channel layer has a first surface adjacent to the substrate, a second surface facing the first surface, and a channel layer-protection portion on the second surface. The channel layer-protection portion includes a fluoride material.